In-plane switching mode liquid crystal display device and method for fabricating the same

ABSTRACT

An in-plane switching mode LCD having a plurality of pixels arranged in a matrix includes a gate line formed on a lower substrate, a data line formed such that the data line intersect the gate line to define a pixel region, a TFT (Thin Film Transistor) formed at the intersection of the gate line and the data line, a pixel electrode connected to the TFT, a common electrode to generate a horizontal electric field with the pixel electrode, and a common line supplying common voltage to the common electrode, wherein the common line comprises a first common line formed parallel to the gate line, a second common line formed parallel to the date line in a side portion of the pixel region adjacent to the data line, and a third common line formed parallel to the gate line and disposed between a first row and a second row of the matrix.

This application is a Divisional of application Ser. No. 12/121,441filed on May 15, 2008 now U.S. Pat. No. 8,125,603, which claims priorityto Korean Application No. P2007-48352, filed on May 17, 2007 and KoreanApplication No. P2007-80352, filed on Aug. 9, 2007. The entire contentsof all of the above applications are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an in-plane switching (IPS) mode liquidcrystal display (LCD) device, and more particularly, to an IPS mode LCDdevice and a fabrication method thereof having a high aperture ratio andimproving a uniformity of common voltage distribution through all thedisplay panel.

2. Discussion of the Related Art

With a development of an information-oriented society, needs for variousflat panel displays improving defects of a conventional Cathode Ray Tube(CRT) such as heavy weight and large volume have increased.

To this, various flat panel displays such as Liquid Crystal Display(LCD) device, Organic Light Emitting Diode (OLED), Plasma Display Panel(PDP) Device, and Surface-conduction Electron-emitter Display (SED)Device have lately attracted attention.

Especially, an LCD device is representative one of them applied to alarge-sized TV screen through a small-sized mobile phone screen.

Generally, LCD device uses an optical anisotropic property andpolarization properties of liquid crystal (LC) molecules to displayimages. The LC molecules have orientation characteristics resulted fromtheir thin and long shape. Accordingly, the arrangement of liquidcrystal molecules, and their directions may be controlled by applying anelectrical field to them.

Therefore, when the electrical field is applied to the LC molecules, thepolarization properties of light are changed based on the arrangement ofthe LC molecules, which enables an LCD device to display images.According to a direction of electric field driving LC molecules, the LCDdevice is classified into a vertical electric field type LCD and ahorizontal electric field type LCD.

In the vertical electric field type LCD, for example Twisted Nematic(TN) mode, LC molecules are driven by vertical electric field generatedbetween a common electrode and a pixel electrode, because the commonelectrode is formed on an upper substrate and the pixel electrode isformed on a lower substrate. The vertical electric field type LCD has alarge aperture ratio, but it has a defect of a narrow viewing angle ofabout 90°.

In the horizontal electric field type LCD, for example In-PlaneSwitching (IPS) mode, LC molecules are driven by horizontal electricfield generated between a common electrode and a pixel electrode,because the common electrode and the pixel electrode are formed on thesame substrate. The horizontal electric field type LCD has a widerviewing angle of 160° than the vertical electric field type LCD.

Hereinafter, a conventional in-plane switching mode LCD will beexplained more circumstantially. A conventional in-plane switching modeLCD comprises a lower substrate and an upper substrate located at apredetermined interval, a spacer to maintain a fixed cell gap betweenthe two substrates, and liquid crystal interposed between the twosubstrates.

A thin film transistor array (TFT array) and an alignment film layerapplied to the TFT array for alignment of liquid crystal are formed onthe lower substrate. The thin film transistor array includes a gateline, a data line crossed the gate line to define a pixel region, a thinfilm transistor (TFT) formed adjacent to a crossing of the gate line andthe data line, and a pixel electrode connected to the TFT.

A color filter array (CF array) and an alignment film layer applied tothe CF array for alignment of liquid crystal to are formed on the uppersubstrate. The CF array includes a black matrix formed as a shape of amatrix to define a pixel region and to shield light, and a color filterformed at the pixel region.

FIG. 1 is a plain view of the conventional LCD. As shown in FIG. 1, alower substrate 45 in the conventional LCD includes a gate line, a gateinsulating film 44 formed to cover the gate line, a data line 4 formedon the gate insulating film crossing the gate line to define a pixelregion, a TFT formed adjacent to a crossing of the gate line and thedata line, a passivation layer 50 formed to cover the TFT, a pixelelectrode 14 formed on the passivation layer to be connected with theTFT, a common electrode 18 to generate a horizontal electric field withthe pixel electrode, and a common line 16 formed in the pixel region tosupply common voltage to the common electrode.

Under the data line 4, a semiconductor pattern 48 comprising an activelayer 15 and an ohmic contact layer 49 can be formed.

The upper substrate 65 includes a black matrix 66 formed as a shape of amatrix to define a pixel region and to shield light, and a color filter67 formed at the pixel region.

FIG. 1 is a perspective view of a related art LCD device. As shown inFIG. 1, the prior art LCD device includes a first substrate 1 a, asecond substrate 1 b, and a liquid crystal layer 3. At this time, thefirst and second substrates 1 a and 1 b are bonded to each other at apredetermined interval, and the liquid crystal layer 3 is formed betweenthe first and second substrates 1 a and 1 b by injection of liquidcrystal.

However, the conventional in-plane switching mode LCD has a problem oflow aperture ratio caused by several patterns formed in the pixel regionsuch as the pixel electrode, the common electrode, and a common line tosupply common voltage to the common electrode.

Additionally, after-image may be generated because a distribution ofcommon voltage level through an entire display panel is non-uniformedowing to the line resistance.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to an in-plane switchingmode LCD and method for fabricating the same that substantially obviatesone or more problems due to limitations and disadvantages of theconventional in-plane switching mode LCD.

An advantage of the present invention is to provide an in-planeswitching mode LCD device and method for fabricating the same that canincrease aperture ratio and luminance.

Moreover, other advantage of the present invention is to provide anin-plane switching mode LCD device and method for fabricating the samethat can uniform the common voltage level through the entire displaypanel and prevent the LCD from after-image.

Additional features and advantages of the invention will be set forth inthe description which follows, and in part will be apparent from thedescription, or may be learned by practice of the invention. These andother advantages of the invention will be realized and attained by thestructure particularly pointed out in the written description and claimshereof as well as the appended drawings.

To achieve these and other advantages and in accordance with the purposeof an embodiment of the present invention, an in-plane switching modeliquid crystal display device having a plurality of pixels arranged in amatrix includes a gate line formed on a lower substrate, a data lineformed such that the data line intersect the gate line to define a pixelregion, a TFT (Thin Film Transistor) formed at the intersection of thegate line and the data line, a pixel electrode connected to the TFT, acommon electrode to generate a horizontal electric field with the pixelelectrode, and a common line supplying common voltage to the commonelectrode, wherein the common line comprises a first common line formedparallel to the gate line in a lower portion of the pixel region, asecond common line formed parallel to the date line in a side portion ofthe pixel region adjacent to the data line, and a third common lineformed parallel to the gate line in a upper portion of the pixel region,and wherein the data line comprises a pair of sub-lines facing directlywith each other in every two pixel regions.

To achieve these and advantages and in accordance with the purpose ofother embodiment of the present invention, an in-plane switching modeliquid crystal display device having a plurality of pixels arranged in amatrix includes a gate line formed on a lower substrate, a data lineformed such that the data line intersect the gate line to define a pixelregion, a TFT (Thin Film Transistor) formed at the intersection of thegate line and the data line, a pixel electrode connected to the TFT, acommon electrode to generate a horizontal electric field with the pixelelectrode, and a common line supplying common voltage to the commonelectrode, wherein the pixel comprises a first sub-pixel, a secondsub-pixel, a third sub-pixel and a fourth sub-pixel arranged in a 2 by 2matrix, wherein the data line comprises a pair of sub-lines facingdirectly with each other in every two pixel regions, wherein the commonline comprises a first common line formed parallel to the gate line, asecond common line formed parallel to the date line in a side portion ofthe pixel region adjacent to the data line, and a third common lineformed parallel to the gate line and disposed between a first row and asecond row of the matrix, and wherein the sub-pixels of the first rowand sub-pixels of the second row are symmetric with respect to the thirdcommon line.

To achieve these and advantages and in accordance with the purpose ofanother embodiment of the present invention, an in-plane switching modeliquid crystal display device having a plurality of pixels arranged in amatrix includes a gate line formed on a lower substrate, a data lineformed such that the data line intersect the gate line to define a pixelregion, a TFT (Thin Film Transistor) formed at the intersection of thegate line and the data line, a pixel electrode connected to the TFT, acommon line parallel to the gate line and formed in an upper portion ofthe pixel region, a common electrode parallel to the pixel electrodesuch that the common electrode is branched from the common line andelongated to the pixel region, and a vertical common line formedparallel to the data line, wherein the data line comprises a pair ofsub-lines facing directly with each other, and wherein the data line andthe vertical common line are disposed alternatively between one pixelregion.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this application, illustrate embodiment(s) of the invention andtogether with the description serve to explain the principle of theinvention. In the drawings;

FIG. 1 is a perspective view of a conventional in-plane switching modeLCD.

FIG. 2 is a schematic plane view of the in-plane switching liquidcrystal display device according to the first embodiment of the presentinvention.

FIG. 3 shows an upper portion, a lower portion, a side portion and acentral portion of a pixel region in the present invention.

FIG. 4 and FIG. 5 are schematic cross-sectional view taken along lines“I-I′”, “II-II′” of FIG. 2 respectively.

FIG. 6A, FIG. 6B, FIG. 6C, and FIG. 6D are process cross-sectional viewof the first embodiment of the present invention.

FIG. 7 is a plane view illustrating another structure according to thefirst embodiment of the in-plane mode liquid crystal display device.

FIG. 8 is a plane view illustrating the in-plane switching mode liquidcrystal display device according to the second embodiment of the presentinvention.

FIG. 9 is a plane view illustrating another structure according to thesecond embodiment of the in-plane mode liquid crystal display device.

FIG. 10 is a plane view illustrating the in-plane switching mode liquidcrystal display device according to the third embodiment of the presentinvention.

FIG. 11 is a plane view of the in-plane switching mode LCD according tothe fourth embodiment of the present invention.

FIG. 12 shows an upper portion and a lower portion of the verticalcommon line in the present invention.

FIG. 13 is a plane view of the in-plane switching mode LCD according tothe fifth embodiment of the present invention.

FIG. 14 is a plane view illustrating another structure according to thefifth embodiment of the in-plane mode liquid crystal display device.

FIG. 15 is a cross-section view comparing the conventional structureaccording to FIG. 1 and the structure of the present invention accordingto FIG. 5 in the in-plane switching mode LCD.

DETAILED DESCRIPTION Embodiment 1

FIG. 2, FIG. 3, FIG. 4, and FIG. 5 shows in-plane switching liquidcrystal display device according to a first embodiment of the presentinvention. FIG. 2 is a schematic plane view of the in-plane switchingliquid crystal display device according to the first embodiment of thepresent invention. FIG. 3 shows an upper portion, a lower portion, aside portion and a central portion of a pixel region in the presentinvention. FIG. 4 and FIG. 5 are schematic cross-sectional view takenalong lines “I-I′”, “II-II′” of FIG. 2 respectively.

As shown in FIG. 2 to FIG. 5, in-plane switching mode liquid crystaldisplay device includes a gate line 102 formed on a lower substrate 145,a data line 104 formed such that the data line 104 intersect the gateline 102 to define a pixel region 105, a TFT (Thin Film Transistor) 106formed at the intersection of the gate line 102 and the data line 104, apixel electrode 114 connected to the TFT 106, a common line 116supplying common voltage, and a common electrode 118 to generate ahorizontal electric field with the pixel electrode 114, wherein the dataline comprises a pair of sub-lines 104 a, 104 b facing directly witheach other in every two pixel regions.

The common line 116 comprises a first common line 116 a formed parallelto the gate line 102 in a lower portion of the pixel region, a secondcommon line 116 b formed parallel to the date line 104 in a side portionof the pixel region, and a third common line 116 c formed parallel tothe gate line 102 in a upper portion of the pixel region. The secondcommon line is only formed in the side portion adjacent to the dataline.

As shown in FIG. 4, the TFT 106 includes a gate electrode 108 connectedto the gate line 102, a gate insulator 144 covering the gate line 102the common line 116, a semiconductor patter 148 on the gate insulator144 including an active layer 115 and an ohmic contact layer 149, asource electrode 110 connected to the data line 104 on the one side ofthe semiconductor pattern 148, and a drain electrode 112 spaced apartfrom the source electrode 110 in opposition to the source electrode 110on the semiconductor pattern 148.

The active layer 115 is exposed between the source and the drainelectrodes and has a function of a channel between them. The ohmiccontact layer 149 is interposed between the source/drain electrodes andthe active layer 115 to make the active layer 115 ohmic-contacted to thesource/drain electrodes. And a passivation film 150 covers the TFT 106to protect the TFT.

The common line 116 supplies common voltage to the common electrode 118.

The gate line 102 supplies gate signal to the gate electrode 108, andthe data line 104 supplies pixel signal to the pixel electrode 114through the drain electrode 112 of the TFT 106.

The TFT 106 supplies the pixel signal to the pixel electrode 114 appliedby data line 104.

The pixel electrode 114 comprises a first pixel electrode 114 a parallelto the gate line 102 and connected to the TFT 106 through a firstcontact hole 117, and a plurality of second pixel electrodes 114 bbranched to the pixel region from the first pixel electrode 114 a. Inaddition to, the pixel electrode has a portion partially overlapped withthe common line 116 to function as a storage capacitor keeping pixelvoltage charged to the pixel electrode 114 for a frame.

The common electrodes 118 comprises a first common electrode 118 aconnected to the third common line 116 c through a second contact hole119, and a plurality of second common electrodes 118 b branched to thepixel region from the first common electrode 118 a. Each of secondcommon electrodes is arranged alternatively with each of second pixelelectrodes.

The gate line 102 and common line 116 are formed in the same layer, andthe pixel electrode 114 and common electrode 118 are formed in the samelayer.

Additionally, sub-pixels arranged in the direction parallel to the gateline are able to share at least one of the first common line 116 a andthe third common line 116 c. As shown in FIG. 2, the third common line116 c can also be shared in the only two sub-pixels arranged between twoneighboring data lines.

And, in the first embodiment of the present invention, two pixel regionsare disposed between two neighboring data lines. FIG. 2 shows that onepixel comprising a first sub-pixel of red color (R), a second sub-pixelof green color (G), and a third sub-pixel of blue color (B). As shown inFIG. 2, a data line comprising a pair of sub-lines is arranged betweenthe second and third sub-pixels, and the data line is not arrangedbetween the first and second sub-pixels. In addition to, although it isnot shown in FIG. 2, a data line comprising a pair of sub-lines isarranged between the first and second sub-pixels, and the data line isnot arranged between the second and third sub-pixels in an adjacentpixel to the pixel shown in FIG. 2.

As shown in FIG. 4 and FIG. 5, a black matrix 166 and a color filter 167are formed on the upper substrate 165. The black matrix 166 is formedcorresponding to the gate line 102, the data line 104, TFT 106, and thecommon line 116 to shield the transmission of light. The color filter167 is also formed corresponding to the pixel region of each ofsub-pixels.

As shown in FIG. 5, the data line 104 comprising a pair of sub-lines isdisposed in every two sub-pixels.

For reference, FIG. 3 shows a pixel region comprising an upper portion182, a side portion 184, a lower portion 186, and a central portion 188.The upper portion 182 is a part of the pixel region including an upperedge of the pixel region. The lower portion 186 is a part of the pixelregion including a lower edge of the pixel region. The side portion 184comprises a left side portion 184 a and a right side portion 184 b. Theleft and the right side portions are parts of the pixel region includinga left edge and a right edge of the pixel region respectively. Thecentral portion 188 is a remaining part of the pixel region except theupper portion, the lower portion, and a side portion. At this, eachsub-line is connected to a closest thin film transistor.

As described above, in-plane switching mode liquid crystal displaydevice according to the first embodiment of the present invention has aneffect of increasing 4% of aperture ratio in comparison with theconventional in-plane switching mode liquid crystal display device,because two second common lines are disposed in the neighboring twosub-pixels for in-plane switching mode liquid crystal display deviceaccording to the present invention, while four second common lines aredisposed for the conventional in-plane switching mode liquid crystaldisplay device.

Next, referring to FIG. 6A to FIG. 6D, a method of fabricating a liquidcrystal display device according to the first embodiment of the presentinvention will be explained. FIG. 6A, FIG. 6B, FIG. 6C, and FIG. 6D areprocess cross-sectional view of the first embodiment of the presentinvention.

First, as shown FIG. 6A, gate patterns are formed on the lower substrate145.

In the concrete, a gate metal layer is deposited on the lower substrate145 by a depositing method such as a sputtering method. Then, the gatepatterns including a gate line 102, a gate electrode 108, and a commonline 116 are formed by patterning the gate metal layer through aphotolithography process and an etching process.

The common line 116 includes a first common line 116 a and a secondcommon line 116 b. The first common line 116 a is parallel to the gateline and is disposed in an upper portion of the pixel region.

The gate metal layer is formed of a metallic material, such asaluminum/neodymium (Al/Nd), aluminum (Al), copper (Cu), or titanium(Ti).

Then, an inorganic insulating material is deposited on an entire surfaceof the lower substrate including the gate patterns and a gate insulatinglayer 144 is formed. The gate insulating layer can be formed of aninorganic insulating material such as silicon nitride (SiNx) or siliconoxide (SiOx).

Then, shown in FIG. 6B, thin film transistor (TFT) 106 and a data line104. Concretely, an amorphous silicon layer, a n+ amorphous siliconlayer, and a source/drain metal layer are sequentially formed on thelower substrate 142 including the gate insulating layer 144 throughdepositing methods of a PECVD method and a sputtering method.

Then, a photoresist pattern is formed on the source/drain metal layer bya photolithography process using a photo mask. At this, a diffractionexposure mask or a half-tone mask can be used as a photo mask. Thediffraction exposure mask has a slit region corresponding to the channelregion of the thin film transistor. As the result of using a diffractionexposure mask or a half-tone mask, a photo resist pattern correspondingto the channel region of the thin film transistor has lower height thata photo resist pattern corresponding to the source/drain electrodes.

Then, source/drain patterns including a data line 104, a sourceelectrode 110, a drain electrode 112 as one body with the sourceelectrode 110, and a storage electrode 122 are formed by patterning thesource/drain metal layer through a wet etching process using thephotoresist pattern.

Then, a semiconductor pattern 148 comprising an ohmic contact layer 149and an active layer 115 is formed by patterning the n+ amorphous siliconlayer and the amorphous silicon layer at the same time through a dryetching process using the photoresist pattern.

Then, the source/drain metal layer and the ohmic contact layer 149 on achannel region are etched after an ashing process to removing aphotoresist pattern having relatively lower height than other part onthe channel region, and a data line 104 as well as a TFT 106 connectedthe data line is formed.

The data line 104 comprises a pair of sub-lines neighboring with eachother. The sub-lines are directly facing and parallel with each other.TFTs 106 connected with the respective sub-lines are also disposed toface with each other with respect to the data line 104. As thesource/drain metal layer, molybdenum (Mo), titanium (Ti), tantalum (Ta),or molybdenum alloy (Mo alloy) can be used.

As shown FIG. 6 c, a passivation layer 150 is formed on an surface ofthe lower substrate 145 including a TFT by further depositing aninorganic insulating material. The passivation layer 150 may be formedof an inorganic insulating material such as silicon nitride (SiNx) orsilicon oxide (SiOx). After that, the passivation layer 150 is patternedto form a first contact hole 117 and a second contact hole exposingrespectively the drain electrode 112 connected to the TFT 106 and thethird common line 116 c by a photolithography process and an etchingprocess.

Next, as shown in FIG. 6 d, a pixel electrode 114 and a common electrode118 are formed on the passivation layer 150 formed the first contacthole 117 and the second contact hole 119 through a photolithographyprocess and an etching process, after a transparent conducting materialis deposited on the passivation layer 150 by a deposition method such asa sputtering method.

The pixel electrode 114 is formed to comprise a first pixel electrode114 a and a second pixel electrode 114 b. The first pixel electrode isparallel to the gate line 102 and is connected to the drain electrode112 through the first contact hole 117. The second pixel electrode isbranched from the first pixel electrode and is elongated to the pixelregion.

The common line 118 is formed to comprise a first common electrode 118 aand a second common electrode 118 b. The first common electrode ispartially overlapped with the third common line 116 c and is connectedto the third common line 116 c through the second contact hole 119. Thesecond common electrode 118 b is formed in parallel to the second pixelelectrode 114 b in the pixel region.

At this time, as the transparent conducting material, indium tin oxide(ITO), tin oxide (TO), indium zinc oxide (IZO), or indium tin zinc oxide(ITZO) can be used.

FIG. 7 is a plane view illustrating another structure according to thefirst embodiment of the in-plane mode liquid crystal display device. Asshown in FIG. 7, the third common line 116 c disposed in the upperportion of the pixel region is removed among the first, the second, andthe third common lines. And the common electrode 118 is connected to thesecond common line 116 b through a third contact hole 129. As the resultof that, aperture ratio can be increased to an extent of an area of thethird common line 116 c. With the exception of this, FIG. 7 shows thesame structure of an in-plane switching mode liquid crystal displaydevice that FIG. 2 shows.

Embodiment 2

Referring to FIG. 8, the in-plane switching mode liquid crystal displaydevice according to the second embodiment of the present invention willbe explained. FIG. 8 is a plane view illustrating the in-plane switchingmode liquid crystal display device according to the second embodiment ofthe present invention.

As shown in FIG. 8, the in-plane switching mode liquid crystal displaydevice according to the second embodiment of the present invention has asimilar structure to the in-plane switching mode liquid crystal displaydevice according to the first embodiment of the present inventionexcepting that one pixel comprises four sub-pixels. Therefore, in FIG.8, the same reference number will be assigned to the same elements withFIG. 2 to FIG. 5, and same as or similar to those mentioned above willnot be described herein.

Referring to the FIG. 8, in the in-plane switching mode liquid crystaldisplay device according to the second embodiment of the presentinvention, one pixel comprises four sub-pixels of a red sub-pixel (R), agreen sub-pixel (G), a blue sub-pixel (b), and a white sub-pixel (W).Accordingly, one pixel can display one specific color by mixing the fourcolors.

That is, one pixel is defined as four sub-pixels arranged in a 2 by 2matrix in the in-plane switching mode LCD according to the secondembodiment of the present invention. The second common line 118 b and adata line 104 comprising two sub-lines are not disposed between theneighboring two sub-pixels in one pixel, and are disposed between thetwo neighboring two pixels. As the result of that, the in-planeswitching mode liquid crystal display device according to the secondembodiment of the present invention has effects of increasing apertureratio and of increasing color reproduction by minimizing a distancebetween neighboring sub-pixels in one pixel.

A method of fabricating the in-plane switching mode liquid crystaldisplay device according to the second embodiment of the presentinvention is similar to the method of fabricating the in-plane switchingmode liquid crystal display device according to the first embodiment ofthe present invention excepting that one pixel comprises four sub-pixelsdisplaying different colors respectively and that two of second commonlines 116 b as well as a data line 104 comprising two sub-lines aredisposed between neighboring two pixels.

In other words, the method of fabricating the in-plane switching modeliquid crystal display device according to the second embodiment of thepresent invention has a first mask process to form gate patterns, asecond mask process to form a data line 104 and a TFT 106, a third maskprocess to form a passivation layer 150 and contact holes, and a fourthmask process to form a common electrode 118 and a pixel electrode 114similar to the method of fabricating the in-plane switching mode liquidcrystal display device according to the first embodiment of the presentinvention.

However, in the second embodiment of the present invention, two ofsecond common lines 116 b are disposed between two neighboring pixelscontrary to the first embodiment of the present invention, and a dataline comprising a pair of sub-lines is formed between the two of secondcommon lines.

There is no second common line 116 b and a data line 104 between twoneighboring sub-pixels in one pixel.

Detailed explanations in connection with other elements in the secondembodiment of the present invention will be omitted, because they areduplicated with explanations in connection with FIG. 6A to FIG. 6D.

FIG. 9 is a plane view illustrating another structure according to thesecond embodiment of the in-plane mode liquid crystal display device. Asshown in FIG. 9, the third common line 116 c disposed in the upperportion of the pixel region is removed among the first, the second, andthe third common lines. And the common electrode 118 is connected to thesecond common line 116 b through a third contact hole 129. As the resultof that, aperture ratio can be increased to an extent of an area of thethird common line 116 c. With the exception of this, FIG. 9 shows thesame structure of an in-plane switching mode liquid crystal displaydevice that FIG. 2 shows.

Embodiment 3

Referring to FIG. 10, the in-plane switching mode liquid crystal displaydevice according to the third embodiment of the present invention willbe explained. FIG. 10 is a plane view illustrating the in-planeswitching mode liquid crystal display device according to the thirdembodiment of the present invention.

When comparing the third embodiment with the second embodiment of thepresent invention, neighboring sub-pixels in a vertical direction in onepixel share the third common line 116 c and have symmetric structureswith respect to the third common line.

Moreover, shown in FIG. 10, the respective first common electrodes 114 aof neighboring sub-pixels in a horizontal direction in one pixel areconnected to the first common line 116 a through the second contact hole119.

That is, in the third embodiment of the present invention, one pixelcomprises four sub-pixels arranged in 2 by 2 matrix. The first commonline 116 a of sub-pixels in a first row is formed in the upper portionof the pixel region, and the first common line of sub-pixels in a secondrow is formed in the lower portion of the pixel region. Besides,sub-pixels in the first and the second rows share a third common line116 c.

As the result of that, a distance between vertically neighboringsub-pixels in one pixel will be shortened in comparison with the secondembodiment of the present invention shown in FIG. 8, and the thirdembodiment has an effect of increasing more color reproduction than thesecond embodiment.

With the exception of this, the in-plane switching mode liquid crystaldisplay device according to the third embodiment of the presentinvention has similar structure to the in-plane switching mode liquidcrystal display device according to the first embodiment of the presentinvention shown in FIG. 2 to FIG. 5. Therefore, detailed explanations inconnection with other elements in the third embodiment of the presentinvention will be omitted.

Embodiment 4

FIG. 11 is a plane view of the in-plane switching mode LCD according tothe fourth embodiment of the present invention.

As shown in FIG. 11, the in-plane switching mode LCD according to thefourth embodiment of the present invention includes a gate line 102formed on a lower substrate 145, a data line 104 formed such that thedata line 104 intersect the gate line 102 to define a pixel region 105,a TFT 106 formed at the intersection of the gate line 102 and the dataline 104, a pixel electrode 114 connected to the TFT 106, a common line116 formed at an upper portion of the pixel region parallel to the gateline with supplying common voltage, and a vertical common line 126formed parallel to the data line with supplying common voltage, whereinthe data line comprises a pair of sub-lines facing directly with eachother and is arranged alternatively with the vertical common line 126 atan interval of a sub-pixel.

That is, in the fourth embodiment of the present invention, commonvoltage is supplied by the common line 116 corresponding to the thirdcommon line in the first embodiment of the present invention and thevertical common line 126 formed parallel to the data line 104. And,sub-pixels arranged in a horizontal direction share the common line 116and sub-pixels arranged in a vertical direction share the verticalcommon line 126.

The common line 116 is formed of a same layer with the gate line 102,and the vertical common line 126 is formed of a same layer with the dataline 104.

Such as the first embodiment of the present invention, the TFT 106includes a gate electrode 108 connected to the gate line 102, a gateinsulator 144 covering the gate line 102 the common line 116, asemiconductor patter 148 on the gate insulator 144 including an activelayer 115 and an ohmic contact layer 149, a source electrode 110connected to the data line 104 on the one side of the semiconductorpattern 148, and a drain electrode 112 spaced apart from the sourceelectrode 110 in opposition to the source electrode 110 on thesemiconductor pattern 148.

The active layer 115 is exposed between the source and the drainelectrodes and has a function of a channel between them. The ohmiccontact layer 149 is interposed between the source/drain electrodes andthe active layer 115 to make the active layer 115 ohmic-contacted to thesource/drain electrodes. And a passivation film 150 covers the TFT 106to protect the TFT.

The common line 116 supplies common voltage to the common electrode 118.

The gate line 102 supplies gate signal to the gate electrode 108, andthe data line 104 supplies pixel signal to the pixel electrode 114through the drain electrode 112 of the TFT 106.

The TFT 106 supplies the pixel signal to the pixel electrode 114 appliedby data line 104.

The pixel electrode 114 comprises a first pixel electrode 114 a parallelto the gate line 102 and connected to the TFT 106 through a firstcontact hole 117, and a plurality of second pixel electrodes 114 bbranched from the first pixel electrode 114 a and elongated to the pixelregion. In addition to, the fourth embodiments further includes astorage part elongated from the first pixel electrode 114 a andpartially overlapped with the vertical common line 126 is furtherformed. The storage part functions as a storage capacitor keeping pixelvoltage charged to the pixel electrode 114 for a frame.

As shown in FIG. 11, the storage part comprises a first storage part 156a partially overlapped with a lower portion of the vertical common line126 and a second storage part 156 b partially overlapped with an upperportion of the vertical common line 126.

At this, the first storage part 156 a is formed at one of twoneighboring sub-pixels in the horizontal direction and the secondstorage part 156 b is formed at the other of them. And, the first andthe second storage part are arranged alternatively to keep the averageof storage capacitor of the LCD fixed without an accuracy of alignment.

As shown in FIG. 12, the upper portion of the vertical common line 126is a portion of vertical common line corresponding to a lower halfportion of the pixel region, and the lower portion of the verticalcommon line 126 is a portion of vertical common line corresponding to anupper half portion of the pixel region.

The common electrodes 118 comprises a first common electrode 118 aconnected to the third common line 116 c through a second contact hole119, and a plurality of second common electrodes 118 b branched to thepixel region from the first common electrode 118 a. Each of secondcommon electrodes is arranged alternatively with each of second pixelelectrodes. Additionally, the first common electrode 118 a is connectedwith the vertical common line 126 through a fourth contact hole 137. Thevertical common line 126 is exposed through the fourth contact hole 137formed by the removal of the passivation layer 150.

The pixel electrode 114 and common electrode 118 can be formed of thesame layer such as a transparent conducting material or an opaque metallayer.

In addition to, the common line 116 and the vertical common line 126 canbe connected electrically through the first common electrode 114 a tohave an effect of making a level of common voltage uniform through anentire liquid crystal display device.

Embodiment 5

FIG. 13 is a plane view of the in-plane switching mode LCD according tothe fifth embodiment of the present invention.

As shown in FIG. 13, the in-plane switching mode LCD according to thefourth embodiment of the present invention includes a gate line 102formed on a lower substrate 145, a data line 104 formed such that thedata line 104 intersect the gate line 102 to define a pixel region 105,a TFT 106 formed at the intersection of the gate line 102 and the dataline 104, a pixel electrode 114 connected to the TFT 106, a common line116 formed at an upper portion of the pixel region parallel to the gateline with supplying common voltage, and a vertical common line 126formed parallel to the data line with supplying common voltage, whereinthe data line comprises a pair of sub-lines facing directly with eachother and is arranged alternatively with the vertical common line 126 atan interval of a sub-pixel, and wherein the common line 116 and thepixel electrode are formed of the same layer.

Additionally, in fifth embodiment of the present invention, the commonelectrode 114 is also formed of the same layer with the pixel electrode118 such as a transparent material or an opaque metal layer. The commonelectrode is branched from the common line 116 and is elongated to thepixel region.

And, the common line 116 is connected electrically with the verticalcommon line 126 through the fourth contact hole 137 formed to expose thevertical common line.

With the exception of these, the in-plane switching mode liquid crystaldisplay device according to the fifth embodiment of the presentinvention has similar structure to the in-plane switching mode liquidcrystal display device according to the fourth embodiment of the presentinvention shown in FIG. 11 to FIG. 12. Therefore, detailed explanationsin connection with other elements in the third embodiment of the presentinvention will be omitted.

FIG. 14 is a plane view illustrating another structure according to thefifth embodiment of the in-plane mode liquid crystal display device.

In FIG. 14, the common line 116 and the common electrode 114 are formedof the same layer. The common line 116 and the vertical common line 126are connected electrically with each other by a connection pattern 152covering the second contact hole 119 and the fourth contact hole 137 atthe same time. The connection pattern is formed of the same layer withthe pixel electrode 118 such as a transparent conducting material.

Like this, LCD shown in FIG. 14 has a similar structure to LCD shown inFIG. 12 except that the common line as well as the common electrode isformed of the same layer with the gate line and it includes further theconnection pattern.

FIG. 15 is a cross-section view comparing the conventional structureaccording to FIG. 1 and the structure of the present invention accordingto FIG. 5 in the in-plane switching mode LCD.

In FIG. 15, X1 is a region including a data line 14 and a second commonline 16 b to reduce aperture ratio in the conventional structure, and X2is a region including a data line 104 and a second common line 116 b toreduce aperture ratio in the structure of the present invention.

The below table 1 shows lines' width in one sub-pixel of X1, and thebelow table 2 shows lines' width in one sub-pixel of X2.

TABLE 1 Line Width of A Data Line 5.7 μM Line Width of A Second 8.0 μM ×2 = 16.0 μM Common Line × 2 An Interval between the 4.0 μM × 2 = 8.0 μMSecond Common Line and A Data Line A Margin of An Interval 3.5 μM × 2 =7.0 between Common Line

TABLE 2 Line Width of A Data Line 5.7 μM Line Width of A Second 8.0 μM ×2 = 16.0 μM Common Line × 2 An Interval between the 4.0 μM × 2 = 8.0 μMSecond Common Line and A Data Line A Margin of An Interval 3.5 μM × 2 =7.0 between Common Line

As shown in table 1, a sum of line width in X1 is about 36.7 μm and asum of line width in X2 is about 52 μm.

However, there is only one X2 in two sub-pixels in the structure of thepresent invention, on the other hand there are two X1s in two sub-pixelsin the conventional structure. As the result of that, 4 to 10 percent oftotal aperture ratio increases.

It will be apparent to those skilled in the art that variousmodifications and variations can be made in the present inventionwithout departing from the spirit or scope of the invention. Thus, it isintended that the present invention cover the modifications and variousof this invention provided they come within the scope of the appendedclaims and their equivalents.

1. An in-plane switching mode liquid crystal display device (LCD) formedof a plurality of pixels arranged in a matrix, comprising: a gate lineformed on a lower substrate; a data line formed such that the data lineintersects the gate line to define a pixel region; a thin filmtransistor (TFT) formed at the intersection of the gate line and thedata line; a pixel electrode connected to the TFT; a common lineparallel to the gate line and formed in an upper portion of the pixelregion; a common electrode parallel to the pixel electrode such that thecommon electrode is branched from the common line and elongated to thepixel region; a vertical common line formed parallel to the data lineand connected to the common line; and a storage part elongated from thepixel electrode and partially overlapped with the vertical common line,wherein the data line comprises a pair of sub-lines facing directly witheach other, and wherein the data line and the vertical common line aredisposed alternatively between one pixel region.
 2. The in-planeswitching mode LCD of claim 1, wherein the common line and the gate lineare formed of a same layer, and the vertical common line and the dataline are formed of a same layer.
 3. The in-plane switching mode LCD ofclaim 1, wherein the storage part is overlapped with an upper portion ofthe vertical common line in one sub-pixel of two neighboring sub-pixelsin a horizontal direction, and the storage part is overlapped with alower portion of the vertical common line in the other sub-pixel of thetwo neighboring sub-pixels.
 4. The in-plane switching mode LCD of claim1, wherein the common line is connected to the vertical common lineelectrically by a connection pattern covering a first contact holeformed to expose the common line and a second contact hole formed toexpose the vertical common line spontaneously.
 5. The in-plane switchingmode LCD of claim 1, wherein the common line and the pixel electrode areformed of a same layer.
 6. The in-plane switching mode LCD of claim 1,wherein the common line and the pixel electrode are formed of atransparent conducting material or an opaque metal layer.